Springer Ferroelectric-Gate Field Effect Transistor Memories (English, Special Edition, Byung-Eun Park | Hiroshi Ishiwara | Masanori Okuyama)

About the Book

This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among the various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random…

Why You Should Read This Book

• Written by acclaimed author Byung-Eun Park | Hiroshi Ishiwara | Masanori Okuyama
• Published by Springer, a respected name in academic and professional publishing
• Covers the domain of Electronics / Circuits / General with depth and clarity
• Available in English — ideal for students, researchers, and professionals alike
• A trusted reference work that belongs on every serious reader's shelf

Product Details

This Special Edition of Ferroelectric-Gate Field Effect Transistor Memories is published by Springer and carries ISBN-13 9789402408393. Packaged securely for delivery across India, this edition is ideal for personal libraries, classroom use, and professional reference.

Who Is This Book For?

Whether you are a student preparing for advanced coursework, a researcher deepening your expertise, or a professional staying current with the field, Ferroelectric-Gate Field Effect Transistor Memories by Byung-Eun Park | Hiroshi Ishiwara | Masanori Okuyama is an excellent choice. Order your copy today from BookBajar and enjoy free shipping with Cash on Delivery available across India.